| PART |
Description |
Maker |
| SKB06N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| APT30GS60KR APT30GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| APT20GS60SRDQ1 APT20GS60SRDQ1G APT20GS60BRDQ1 APT2 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| APT30GS60SRDQ2 APT30GS60SRDQ2G APT30GS60BRDQ2 APT3 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| SIGC07T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SIGC25T60UN Q67041-A4667-A001 SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
